Invention Grant
- Patent Title: Field effect transistor device and fabrication
- Patent Title (中): 场效应晶体管器件和制造
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Application No.: US13554294Application Date: 2012-07-20
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Publication No.: US08742475B2Publication Date: 2014-06-03
- Inventor: Dechao Guo , Shu-Jen Han , Chung-Hsun Lin , Yanfeng Wang
- Applicant: Dechao Guo , Shu-Jen Han , Chung-Hsun Lin , Yanfeng Wang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Corburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
In one aspect of the present invention, a field effect transistor (FET) device includes a first FET including a dielectric layer disposed on a substrate, a first portion of a first metal layer disposed on the dielectric layer, and a second metal layer disposed on the first metal layer, a second FET including a second portion of the first metal layer disposed on the dielectric layer, and a boundary region separating the first FET from the second FET.
Public/Granted literature
- US20120286366A1 Field Effect Transistor Device and Fabrication Public/Granted day:2012-11-15
Information query
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