Invention Grant
US08742478B2 Graphene transistor having air gap, hybrid transistor having the same, and methods of fabricating the same
有权
具有气隙的石墨烯晶体管，具有相同的混合晶体管及其制造方法
- Patent Title: Graphene transistor having air gap, hybrid transistor having the same, and methods of fabricating the same
- Patent Title (中): 具有气隙的石墨烯晶体管，具有相同的混合晶体管及其制造方法
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Application No.: US13667097Application Date: 2012-11-02
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Publication No.: US08742478B2Publication Date: 2014-06-03
- Inventor: Hyun-jong Chung , U-in Chung , Ki-nam Kim
- Applicant: Hyun-jong Chung , U-in Chung , Ki-nam Kim
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0113585 20111102
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A graphene transistor includes: a gate electrode on a substrate; a gate insulating layer on the gate electrode; a graphene channel on the gate insulating layer; a source electrode and a drain electrode on the graphene channel, the source and drain electrode being separate from each other; and a cover that covers upper surfaces of the source electrode and the drain electrode and forms an air gap above the graphene channel between the source electrode and the drain electrode.
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