发明授权
US08742502B2 Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
有权
用于提高使用累积电荷沉降谐波皱纹减少的MOSFET的线性度的方法和装置
- 专利标题： Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
- 专利标题（中）： 用于提高使用累积电荷沉降谐波皱纹减少的MOSFET的线性度的方法和装置
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申请号： US13277108申请日： 2011-10-19
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公开(公告)号： US08742502B2公开(公告)日： 2014-06-03
- 发明人: Christopher N. Brindle , Jie Deng , Alper Genc , Chieh-Kai Yang
- 申请人： Christopher N. Brindle , Jie Deng , Alper Genc , Chieh-Kai Yang
- 申请人地址： US CA San Diego
- 专利权人： Peregrine Semiconductor Corporation
- 当前专利权人： Peregrine Semiconductor Corporation
- 当前专利权人地址： US CA San Diego
- 代理机构： Jaquez & Land LLP
- 代理商 Martin J. Jaquez, Esq.
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
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