发明授权
- 专利标题： Integration of shallow trench isolation and through-substrate vias into integrated circuit designs
- 专利标题（中）： 将浅沟槽隔离和贯通衬底通孔集成到集成电路设计中
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申请号： US12969852申请日： 2010-12-16
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公开(公告)号： US08742535B2公开(公告)日： 2014-06-03
- 发明人: Mark A. Bachman , Sailesh M. Merchant , John Osenbach
- 申请人： Mark A. Bachman , Sailesh M. Merchant , John Osenbach
- 申请人地址： US CA Milpitas
- 专利权人： LSI Corporation
- 当前专利权人： LSI Corporation
- 当前专利权人地址： US CA Milpitas
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/76 ; H01L21/44
摘要：
A method of manufacturing an IC, comprising providing a substrate having a first side and a second opposite side, forming a STI opening in the first side of the substrate and forming a partial TSV opening in the first side of the substrate and extending the partial TSV opening. The extended partial TSV opening is deeper into the substrate than the STI opening. The method also comprises filling the STI opening with a first solid material and filling the extended partial TSV opening with a second solid material. Neither the STI opening, the partial TSV opening, nor the extended partial TSV opening penetrate an outer surface of the second side of the substrate. At least either: the STI opening and the partial TSV opening are formed simultaneously, or, the STI opening and the extended partial TSV opening are filled simultaneously.
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