Invention Grant
- Patent Title: Anti-reflection structures for CMOS image sensors
- Patent Title (中): CMOS图像传感器的防反射结构
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Application No.: US13774650Application Date: 2013-02-22
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Publication No.: US08742560B2Publication Date: 2014-06-03
- Inventor: James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Charles F. Musante
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Anthony J. Canale
- Main IPC: H01L31/0203
- IPC: H01L31/0203 ; H01L23/02

Abstract:
Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
Public/Granted literature
- US20130161777A1 ANTI-REFLECTION STRUCTURES FOR CMOS IMAGE SENSORS Public/Granted day:2013-06-27
Information query
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