Invention Grant
- Patent Title: Dual-phase intermetallic interconnection structure and method of fabricating the same
- Patent Title (中): 双相金属间互连结构及其制造方法
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Application No.: US13736088Application Date: 2013-01-08
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Publication No.: US08742600B2Publication Date: 2014-06-03
- Inventor: Jing-Yao Chang , Tao-Chih Chang , Tung-Han Chuang , Chun-Yen Lee
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW101137147A 20121008
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
Provided are a dual-phase intermetallic interconnection structure and a fabricating method thereof. The dual-phase intermetallic interconnection structure includes a first intermetallic compound, a second intermetallic compound, a first solder layer, and a second solder layer. The second intermetallic compound covers and surrounds the first intermetallic compound. The first intermetallic compound and the second intermetallic compound contain different high-melting point metal. The first solder layer and the second solder layer are disposed at the opposite sides of the second intermetallic compound, respectively. The first intermetallic compound is adapted to fill the micropore defects generated during the formation of the second intermetallic compound.
Public/Granted literature
- US20140097534A1 DUAL-PHASE INTERMETALLIC INTERCONNECTION STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-04-10
Information query
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