A method of forming a magnetoresistive random access memory (MRAM) apparatus includes forming a first conductive line on a first insulating layer, forming a second insulating layer on the first conductive line and forming a magnetic tunnel junction through the second insulating layer to contact the first conductive line. The method also includes forming a cavity adjacent to the magnetic tunnel junction in the second insulating layer and forming a second conductive line on the second insulating layer to contact the magnetic tunnel junction.