发明授权
- 专利标题: Read compensation for partially programmed blocks of non-volatile storage
- 专利标题(中): 读取非易失性存储部分程序块的补偿
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申请号: US13214765申请日: 2011-08-22
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公开(公告)号: US08743615B2公开(公告)日: 2014-06-03
- 发明人: Dana Lee , Ken Oowada
- 申请人: Dana Lee , Ken Oowada
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies Inc.
- 当前专利权人: SanDisk Technologies Inc.
- 当前专利权人地址: US TX Plano
- 代理机构: Vierra Magen Marcus LLP
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/06
摘要:
Read compensation for partially programmed blocks of non-volatile storage is provided. In partially programmed blocks, the threshold voltage distributions may be shifted down relative to their final positions. Upon receiving a request to read a page that is stored in a block, a determination may be made whether the block is partially programmed. If so, then a suitable compensation may be made when reading the requested page. This compensation may compensate for the non-volatile storage elements (or pages) in the block that have not yet been programmed. The amount of compensation may be based on the amount of interference that would be caused to the requested page by later programming of the other pages. The compensation may compensate for shifts in threshold voltage distributions of the requested page that would occur from later programming of other pages.
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