发明授权
- 专利标题: Memory device including redundant memory cell block
- 专利标题(中): 存储器件包括冗余存储器单元块
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申请号: US13620280申请日: 2012-09-14
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公开(公告)号: US08743637B2公开(公告)日: 2014-06-03
- 发明人: Tatsuru Matsuo
- 申请人: Tatsuru Matsuo
- 申请人地址: JP Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JP Kawasaki
- 代理机构: Arent Fox LLP
- 优先权: JP2011-270039 20111209
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
A clock signal is supplied to a first repair flag flip-flop, a second repair flag flip-flop, a first repair data flip-flop group, and a second repair data flip-flop group to serially transfer a second repair flag and a first repair flag stored in a non-volatile memory to the second repair flag flip-flop and the first repair flag flip-flop. Subsequently, repair data stored in the non-volatile memory is serially output to the first repair data flip-flop group, and repair data of the first repair data flip-flop group and the second repair data flip-flop group is serially transferred.
公开/授权文献
- US20130148451A1 MEMORY DEVICE INCLUDING REDUNDANT MEMORY CELL BLOCK 公开/授权日:2013-06-13
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