发明授权
US08743637B2 Memory device including redundant memory cell block 有权
存储器件包括冗余存储器单元块

  • 专利标题: Memory device including redundant memory cell block
  • 专利标题(中): 存储器件包括冗余存储器单元块
  • 申请号: US13620280
    申请日: 2012-09-14
  • 公开(公告)号: US08743637B2
    公开(公告)日: 2014-06-03
  • 发明人: Tatsuru Matsuo
  • 申请人: Tatsuru Matsuo
  • 申请人地址: JP Kawasaki
  • 专利权人: Fujitsu Limited
  • 当前专利权人: Fujitsu Limited
  • 当前专利权人地址: JP Kawasaki
  • 代理机构: Arent Fox LLP
  • 优先权: JP2011-270039 20111209
  • 主分类号: G11C29/00
  • IPC分类号: G11C29/00
Memory device including redundant memory cell block
摘要:
A clock signal is supplied to a first repair flag flip-flop, a second repair flag flip-flop, a first repair data flip-flop group, and a second repair data flip-flop group to serially transfer a second repair flag and a first repair flag stored in a non-volatile memory to the second repair flag flip-flop and the first repair flag flip-flop. Subsequently, repair data stored in the non-volatile memory is serially output to the first repair data flip-flop group, and repair data of the first repair data flip-flop group and the second repair data flip-flop group is serially transferred.
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