发明授权
- 专利标题： Methods and systems for operating memory elements
- 专利标题（中）： 用于操作内存元素的方法和系统
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申请号： US13752037申请日： 2013-01-28
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公开(公告)号： US08743640B2公开(公告)日： 2014-06-03
- 发明人: Jennifer Taylor , John D. Porter
- 申请人： Jennifer Taylor , John D. Porter
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Fletcher Yoder P.C.
- 主分类号： G11C7/02
- IPC分类号： G11C7/02
摘要：
Methods and systems for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.
公开/授权文献
- US20130141960A1 METHODS AND SYSTEMS FOR OPERATING MEMORY ELEMENTS 公开/授权日：2013-06-06
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