发明授权
US08744349B2 Multi-stack semiconductor integrated circuit device 有权
多层半导体集成电路器件

  • 专利标题: Multi-stack semiconductor integrated circuit device
  • 专利标题(中): 多层半导体集成电路器件
  • 申请号: US13501879
    申请日: 2010-10-08
  • 公开(公告)号: US08744349B2
    公开(公告)日: 2014-06-03
  • 发明人: Tadahiro Kuroda
  • 申请人: Tadahiro Kuroda
  • 申请人地址: JP Tokyo
  • 专利权人: Keio University
  • 当前专利权人: Keio University
  • 当前专利权人地址: JP Tokyo
  • 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
  • 优先权: JP2009-237872 20091015
  • 国际申请: PCT/JP2010/067727 WO 20101008
  • 国际公布: WO2011/046071 WO 20110421
  • 主分类号: H04B5/00
  • IPC分类号: H04B5/00 H04B7/00
Multi-stack semiconductor integrated circuit device
摘要:
The invention relates to a multi-stack semiconductor integrated circuit device where communication between semiconductor chips can be efficiently carried out by bypassing a number of chips. Each semiconductor chip that forms a multi-stack semiconductor integrated circuit device having a stack structure where four or more semiconductor chips having the same shape are stacked on top of each other is provided with: a first coil for transmission/reception for communication between chips over a long distance; and a second coil for transmission/reception for communication between chips over a short distance, of which the size is smaller than that of the above-described first coil for transmission/reception.
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