Invention Grant
US08745549B2 Method and system for forming high precision patterns using charged particle beam lithography
有权
使用带电粒子束光刻法形成高精度图案的方法和系统
- Patent Title: Method and system for forming high precision patterns using charged particle beam lithography
- Patent Title (中): 使用带电粒子束光刻法形成高精度图案的方法和系统
-
Application No.: US13366335Application Date: 2012-02-05
-
Publication No.: US08745549B2Publication Date: 2014-06-03
- Inventor: Akira Fujimura , Robert C. Pack
- Applicant: Akira Fujimura , Robert C. Pack
- Applicant Address: US CA San Jose
- Assignee: D2S, Inc.
- Current Assignee: D2S, Inc.
- Current Assignee Address: US CA San Jose
- Agency: The Mueller Law Office, P.C.
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction is disclosed in which a set of charged particle beam shots is determined that is capable of forming a pattern on a surface, wherein critical dimension (CD) split is reduced through the use of overlapping shots.
Public/Granted literature
- US20130205264A1 METHOD AND SYSTEM FOR FORMING HIGH PRECISION PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY Public/Granted day:2013-08-08
Information query
