Invention Grant
US08747553B2 β-Ga2O3 single crystal growing method including crystal growth method
有权
包括晶体生长法的-Ga2O3单晶生长方法
- Patent Title: β-Ga2O3 single crystal growing method including crystal growth method
- Patent Title (中): 包括晶体生长法的-Ga2O3单晶生长方法
-
Application No.: US13572976Application Date: 2012-08-13
-
Publication No.: US08747553B2Publication Date: 2014-06-10
- Inventor: Noboru Ichinose , Kiyoshi Shimamura , Kazuo Aoki , Encarnacion Antonia Garcia Villora
- Applicant: Noboru Ichinose , Kiyoshi Shimamura , Kazuo Aoki , Encarnacion Antonia Garcia Villora
- Applicant Address: JP Tokyo
- Assignee: Waseda University
- Current Assignee: Waseda University
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2003-46552 20030224; JP2003-66020 20030312; JP2003-137916 20030515
- Main IPC: C30B25/00
- IPC: C30B25/00 ; C30B23/00
Abstract:
A method of growing a p-type thin film of β-Ga2O3 includes preparing a substrate including a β-Ga2O3 single crystal, and growing a p-type thin film of β-Ga2O3 on the substrate. The p-type thin film is grown in a manner that Ga in the thin film is replaced by a p-type dopant selected from H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb.
Public/Granted literature
Information query
