发明授权
- 专利标题: Plasma processing apparatus
- 专利标题(中): 等离子体处理装置
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申请号: US13338722申请日: 2011-12-28
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公开(公告)号: US08747608B2公开(公告)日: 2014-06-10
- 发明人: Tatehito Usui , Kazuhiro Joo , Takashi Fujii
- 申请人: Tatehito Usui , Kazuhiro Joo , Takashi Fujii
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2006-051058 20060227
- 主分类号: C23C16/52
- IPC分类号: C23C16/52 ; C23C16/50 ; C23C16/06 ; C23C16/22
摘要:
A plasma processing apparatus includes a detector for detecting interference light of multiple wavelengths from a surface of a sample during processing, a pattern comparator for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, a deviation comparator for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, a recorder for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit.
公开/授权文献
- US20120101621A1 Plasma Processing Apparatus 公开/授权日:2012-04-26
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