发明授权
US08748244B1 Enhancement and depletion mode GaN HMETs on the same substrate
有权
增强和耗尽型GaN HMETs在同一基板上
- 专利标题： Enhancement and depletion mode GaN HMETs on the same substrate
- 专利标题（中）： 增强和耗尽型GaN HMETs在同一基板上
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申请号： US13456421申请日： 2012-04-26
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公开(公告)号： US08748244B1公开(公告)日： 2014-06-10
- 发明人: Andrea Corrion , Miroslav Micovic , Keisuke Shinohara , Peter J Willadsen , Shawn D Burnham , Hooman Kazemi , Paul B Hashimoto
- 申请人： Andrea Corrion , Miroslav Micovic , Keisuke Shinohara , Peter J Willadsen , Shawn D Burnham , Hooman Kazemi , Paul B Hashimoto
- 申请人地址： US CA Malibu
- 专利权人： HRL Laboratories, LLC
- 当前专利权人： HRL Laboratories, LLC
- 当前专利权人地址： US CA Malibu
- 代理商 Daniel R. Allemeier; George R. Rapacki
- 主分类号： H01L21/335
- IPC分类号： H01L21/335
摘要：
The present invention relates to fabrication of enhancement mode and depletion mode High Electron Mobility Field Effect Transistors on the same die separated by as little as 10 nm. The fabrication method uses selective decomposition and selective regrowth of the Barrier layer and the Cap layer to engineer the bandgap of a region on a die to form an enhancement mode region. In these regions zero or more devices may be fabricated.