发明授权
- 专利标题： Method for manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13539925申请日： 2012-07-02
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公开(公告)号： US08748276B2公开(公告)日： 2014-06-10
- 发明人: Hideki Hayashi
- 申请人： Hideki Hayashi
- 申请人地址： JP Osaka-shi
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka-shi
- 代理机构： Venable LLP
- 代理商 Michael A. Sartori; Steven J. Schwarz
- 优先权： JP2011-155287 20110714
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/266
摘要：
A through portion is formed on a semiconductor substrate. Into the semiconductor substrate, a first ion implantation is performed via the through portion. The through portion is at least partially removed in the thickness direction from a region of at least a portion of the through portion when viewed in a plan view. A second ion implantation is performed into the semiconductor substrate at the region of at least the portion thereof. An implantation energy for the first ion implantation is equal to an implantation energy for the second ion implantation.
公开/授权文献
- US20130017675A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2013-01-17
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