Invention Grant
US08748283B2 Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
有权
形成电容器和包括金红石型二氧化钛材料的半导体器件的方法
- Patent Title: Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
- Patent Title (中): 形成电容器和包括金红石型二氧化钛材料的半导体器件的方法
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Application No.: US13903267Application Date: 2013-05-28
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Publication No.: US08748283B2Publication Date: 2014-06-10
- Inventor: Tsai-Yu Huang , Vishwanath Bhat , Vassil Antonov , Chun-I Hsieh , Chris Carlson
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material.
Public/Granted literature
- US20130260529A1 METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A RUTILE TITANIUM DIOXIDE MATERIAL Public/Granted day:2013-10-03
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