Invention Grant
- Patent Title: Connection to first metal layer in thin film transistor process
- Patent Title (中): 在薄膜晶体管工艺中连接到第一金属层
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Application No.: US13629547Application Date: 2012-09-27
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Publication No.: US08748320B2Publication Date: 2014-06-10
- Inventor: Ming-Chin Hung , Young Bae Park , Chun-Yao Huang , Shih Chang Chang , John Z. Zhong
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Brownstein Hyatt Farber Schreck, LLP
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
A method of connecting to a first metal layer in a semiconductor flow process. Disclosed embodiments connect to the first metal layer by etching a first portion of a viahole through an etch stop layer and a gate insulation layer to reach a first metal layer, depositing a second metal layer such that the second metal layer contacts the first metal layer within the viahole, and etching a second portion of the viahole through a first passivation layer and an organic layer to reach the second metal layer.
Public/Granted literature
- US20140084292A1 Connection to First Metal Layer in Thin Film Transistor Process Public/Granted day:2014-03-27
Information query
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