发明授权
US08748792B2 Photosensor and photosensor array with capacitive element 有权
具有电容元件的光电传感器和光电传感器阵列

Photosensor and photosensor array with capacitive element
摘要:
A photosensor includes a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage, a capacitive element connected between the lower electrode and a second reference voltage, a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state, and a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on.
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