发明授权
- 专利标题： Inspection method and apparatus, and corresponding lithographic apparatus
- 专利标题（中）： 检验方法和装置，以及相应的光刻设备
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申请号： US12902341申请日： 2010-10-12
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公开(公告)号： US08749786B2公开(公告)日： 2014-06-10
- 发明人: Andreas Fuchs , Maurits Van Der Schaar , Scott Anderson Middlebrooks , Panagiotis Pieter Bintevinos
- 申请人： Andreas Fuchs , Maurits Van Der Schaar , Scott Anderson Middlebrooks , Panagiotis Pieter Bintevinos
- 申请人地址： NL Veldhoven
- 专利权人： ASML Netherlands B.V.
- 当前专利权人： ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven
- 代理机构： Sterne, Kessler, Goldstein & Fox P.L.L.C
- 主分类号： G01B11/00
- IPC分类号： G01B11/00
摘要：
A method and associated apparatus determine an overlay error on a substrate. A beam is projected onto three or more targets. Each target includes first and second overlapping patterns with predetermined overlay offsets on the substrate. The asymmetry of the radiation reflected from each target on the substrate is measured. The overlay error not resultant from the predetermined overlay offsets is determined. The function that enables calculation of overlay from asymmetry for other points on the wafer is determined by limiting the effect of linearity error when determining the overlay error from the function.
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