发明授权
US08753468B2 Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
有权
用于降低石墨烯膜厚度以及从SiC衬底去除和转移外延石墨烯膜的方法
- 专利标题： Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
- 专利标题（中）： 用于降低石墨烯膜厚度以及从SiC衬底去除和转移外延石墨烯膜的方法
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申请号： US12855692申请日： 2010-08-12
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公开(公告)号： US08753468B2公开(公告)日： 2014-06-17
- 发明人: Joshua D. Caldwell , Karl D. Hobart , Travis Anderson , Francis J. Kub
- 申请人： Joshua D. Caldwell , Karl D. Hobart , Travis Anderson , Francis J. Kub
- 申请人地址： US DC Washington
- 专利权人： The United States of America, as represented by the Secretary of the Navy
- 当前专利权人： The United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址： US DC Washington
- 代理机构： US Naval Research Laboratory
- 代理商 Rebecca L. Forman
- 主分类号： B44C1/17
- IPC分类号： B44C1/17 ; B44C1/24 ; B32B37/02 ; B32B37/12 ; B32B37/26 ; B32B38/10 ; B44C3/08 ; B29C65/48
摘要：
A method for reducing graphene film thickness on a donor substrate and transferring graphene films from a donor substrate to a handle substrate includes applying a bonding material to the graphene on the donor substrate, releasing the bonding material from the donor substrate thereby leaving graphene on the bonding material, applying the bonding material with graphene onto the handle substrate, and releasing the bonding material from the handle substrate thereby leaving the graphene on the handle substrate. The donor substrate may comprise SiC, metal foil or other graphene growth substrate, and the handle substrate may comprise a semiconductor or insulator crystal, semiconductor device, epitaxial layer, flexible substrate, metal film, or organic device.
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