发明授权
US08754400B2 Two-dimensional patterning employing self-assembled material 失效
采用自组装材料的二维图案

Two-dimensional patterning employing self-assembled material
摘要:
A first nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running along a first direction is formed from first self-assembling block copolymers within a first layer. The first layer is filled with a filler material and a second layer is deposited above the first layer containing the first nanoscale nested line structure. A second nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running in a second direction is formed from second self-assembling block copolymers within the second layer. The composite pattern of the first nanoscale nested line structure and the second nanoscale nested line structure is transferred into an underlayer beneath the first layer to form an array of structures containing periodicity in two directions.
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