发明授权
- 专利标题: Optical semiconductor device and method for manufacturing same
- 专利标题(中): 光半导体装置及其制造方法
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申请号: US13154999申请日: 2011-06-07
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公开(公告)号: US08754429B2公开(公告)日: 2014-06-17
- 发明人: Hiroshi Koizumi , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa , Yoshiaki Sugizaki , Akihiro Kojima
- 申请人: Hiroshi Koizumi , Yasuhide Okada , Susumu Obata , Tomomichi Naka , Kazuhito Higuchi , Kazuo Shimokawa , Yoshiaki Sugizaki , Akihiro Kojima
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2010-130526 20100607
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L21/00
摘要:
According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.