发明授权
- 专利标题： Light emitting diode
- 专利标题（中）： 发光二极管
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申请号： US13400097申请日： 2012-02-19
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公开(公告)号： US08754438B2公开(公告)日： 2014-06-17
- 发明人: Ya-Wen Lin , Shih-Cheng Huang , Po-Min Tu , Chia-Hung Huang , Shun-Kuei Yang
- 申请人： Ya-Wen Lin , Shih-Cheng Huang , Po-Min Tu , Chia-Hung Huang , Shun-Kuei Yang
- 申请人地址： TW Hsinchu Hsien
- 专利权人： Advanced Optoelectronics Technology, Inc.
- 当前专利权人： Advanced Optoelectronics Technology, Inc.
- 当前专利权人地址： TW Hsinchu Hsien
- 代理机构： Novak Druce Connolly Bove + Quigg LLP
- 优先权： CN201110181775 20110630
- 主分类号： H01L33/62
- IPC分类号： H01L33/62
摘要：
An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.
公开/授权文献
- US20130001508A1 LIGHT EMITTING DIODE 公开/授权日：2013-01-03
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