发明授权
- 专利标题： Strained channel transistor structure and method
- 专利标题（中）： 应变通道晶体管结构和方法
-
申请号： US12857543申请日： 2010-08-16
-
公开(公告)号： US08754447B2公开(公告)日： 2014-06-17
- 发明人: Jin Ping Liu , Alex K H See , Mei Sheng Zhou , Liang Choo Hsia
- 申请人： Jin Ping Liu , Alex K H See , Mei Sheng Zhou , Liang Choo Hsia
- 申请人地址： SG Singapore
- 专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Horizon IP Pte Ltd
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A transistor device structure comprising: a substrate portion formed from a first material; and a source region, a drain region and a channel region formed in said substrate, the source and drain regions comprising a plurality of islands of a second material different from the first material, the islands being arranged to induce a strain in said channel region of the substrate.
公开/授权文献
- US20100308374A1 STRAINED CHANNEL TRANSISTOR STRUCTURE AND METHOD 公开/授权日：2010-12-09
信息查询
IPC分类:
