发明授权
- 专利标题: Non-volatile memory device and related read method
- 专利标题(中): 非易失性存储器件及相关读取方法
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申请号: US13358534申请日: 2012-01-26
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公开(公告)号: US08755224B2公开(公告)日: 2014-06-17
- 发明人: Eun-jin Yun , Sang-chul Kang , Seung-jae Lee
- 申请人: Eun-jin Yun , Sang-chul Kang , Seung-jae Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2011-0014142 20110217
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A nonvolatile memory device comprises a memory cell array, a page buffer, and a bit line connection signal controller. The memory cell array comprises a plurality of word lines and bit lines arranged in rows and columns, and a plurality of memory cells connected to the respective word lines and bit lines. The page buffer connects a selected bit line among the plurality of bit lines to the page buffer, applies a precharge voltage to the selected bit line, and senses a voltage of the selected bit line after developing of the selected bit line according to a bit line connection signal, during a read operation. The bit line connection signal controller changes the bit line connection signal according to a control signal, during the read operation.
公开/授权文献
- US20120213003A1 NON-VOLATILE MEMORY DEVICE AND RELATED READ METHOD 公开/授权日:2012-08-23