Invention Grant
- Patent Title: Charged particle beam writing apparatus and charged particle beam writing method
- Patent Title (中): 带电粒子束写入装置和带电粒子束写入方法
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Application No.: US13669716Application Date: 2012-11-06
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Publication No.: US08759799B2Publication Date: 2014-06-24
- Inventor: Hironobu Matsumoto
- Applicant: NuFlare Technology, Inc.
- Applicant Address: JP Numazu-shi
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Numazu-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-261561 20111130
- Main IPC: H01J37/02
- IPC: H01J37/02 ; H01J37/302 ; G03F7/20

Abstract:
A charged particle beam writing apparatus according to an embodiment, includes a dose coefficient calculation unit to calculate an n-th dose correction coefficient in iterative calculation of a charged particle beam to be shot in a small region concerned by the iterative calculation, for each small region of small regions made by virtually dividing into mesh-like regions, a change rate calculation unit to calculate, for each small region, a rate of change from an (n-1)th dose correction coefficient to the n-th dose correction coefficient calculated in the iterative calculation, as an n-th change rate, a correction calculation unit to correct, for each small region, the n-th dose correction coefficient by using the n-th change rate, and a dose calculation unit to calculate, for each small region, a dose of a charged particle beam to be shot in a small region concerned by using the n-th dose correction coefficient corrected.
Public/Granted literature
- US20130134329A1 CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD Public/Granted day:2013-05-30
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