发明授权
- 专利标题: Thin film transistor array structure and manufacturing method thereof
- 专利标题(中): 薄膜晶体管阵列结构及其制造方法
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申请号: US13375231申请日: 2011-10-25
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公开(公告)号: US08759831B2公开(公告)日: 2014-06-24
- 发明人: Wei-Hung Chang , Chengming He
- 申请人: Wei-Hung Chang , Chengming He
- 申请人地址: CN Shenzhen
- 专利权人: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- 当前专利权人: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- 当前专利权人地址: CN Shenzhen
- 优先权: CN201110239955 20110819
- 国际申请: PCT/CN2011/081223 WO 20111025
- 国际公布: WO2013/026229 WO 20130228
- 主分类号: H01L31/00
- IPC分类号: H01L31/00 ; H01L21/00
摘要:
A thin film transistor (TFT) array structure for a liquid crystal display (LCD) includes a panel, a first conductive layer, a middle layer, a second conductive layer, a passivation layer, and a black electrode layer. The first conductive layer is formed on the panel using filming technologies and a first photo-mask process. The middle layer is deposited and formed on the first conductive layer using a second photo-mask process. The second conductive layer is formed on the middle layer using a third photo-mask process and a first etching operation. The passivation layer is deposited and formed on the middle layer and the second conductive layer using a forth photo-mask process and a second etching operation. The black electrode layer formed on the passivation layer. The TFT array structure and the manufacturing method of the present disclosure reduce the consumption of the voltage and improve the display effect of the LCD.
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