发明授权
- 专利标题: Bidirectional dual-SCR circuit for ESD protection
- 专利标题(中): 用于ESD保护的双向双SCR电路
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申请号: US13176780申请日: 2011-07-06
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公开(公告)号: US08759871B2公开(公告)日: 2014-06-24
- 发明人: Ming-Hsiang Song , Jam-Wem Lee , Tzu-Heng Chang , Yu-Ying Hsu
- 申请人: Ming-Hsiang Song , Jam-Wem Lee , Tzu-Heng Chang , Yu-Ying Hsu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
An ESD protection circuit includes a pad of an IC, circuitry coupled to the pad for buffering data, an RC power clamp on the IC, and first and second silicon controlled rectifier (SCR) circuits. The RC power clamp is coupled between a positive power supply terminal and a ground terminal. The first SCR circuit is coupled between the pad and the positive power supply terminal. The first SCR circuit has a first trigger input coupled to the RC power clamp circuit. The second SCR circuit is coupled between the pad and the ground terminal. The second SCR circuit has a second trigger input coupled to the RC power clamp circuit. At least one of the SCR circuits includes a gated diode configured to selectively provide a short or relatively conductive electrical path between the pad and one of the positive power supply terminal and the ground terminal.
公开/授权文献
- US20130009204A1 BIDIRECTIONAL DUAL-SCR CIRCUIT FOR ESD PROTECTION 公开/授权日:2013-01-10