发明授权
- 专利标题： Non-volatile memory device with vertical memory cells
- 专利标题（中）： 具有垂直存储单元的非易失性存储器件
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申请号： US13333893申请日： 2011-12-21
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公开(公告)号： US08759902B2公开(公告)日： 2014-06-24
- 发明人: Jung-Ryul Ahn
- 申请人： Jung-Ryul Ahn
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2011-0084122 20110823
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L27/115 ; H01L29/66 ; H01L21/28
摘要：
A non-volatile memory device includes a plurality of gate electrodes stacked over a semiconductor substrate and stretched in a first direction along the semiconductor substrate and a plurality of junction layers having a first region protruding from the semiconductor substrate and crossing the gate electrodes and a second region formed between the gate electrodes.
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