Invention Grant
- Patent Title: Semiconductor device comprising an isolation trench including semiconductor islands
- Patent Title (中): 半导体器件包括包括半导体岛的隔离沟槽
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Application No.: US13321867Application Date: 2009-05-22
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Publication No.: US08759942B2Publication Date: 2014-06-24
- Inventor: Alexander Hoelke , Deb Kumar Pal , Pei Shan Chua , Gopalakrishnan Kulathu Sankar , Kia Yaw Kee , Yang Hao , Uta Kuniss
- Applicant: Alexander Hoelke , Deb Kumar Pal , Pei Shan Chua , Gopalakrishnan Kulathu Sankar , Kia Yaw Kee , Yang Hao , Uta Kuniss
- Applicant Address: DE Erfurt
- Assignee: X-FAB Semiconductor Foundries AG
- Current Assignee: X-FAB Semiconductor Foundries AG
- Current Assignee Address: DE Erfurt
- Agency: Stevens & Showalter LLP
- International Application: PCT/IB2009/052160 WO 20090522
- International Announcement: WO2010/133923 WO 20101125
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/76 ; H01L29/40 ; H01L29/861
Abstract:
The present invention provides semiconductor devices and methods for fabricating the same, in which superior dielectric termination of drift regions is accomplished by a plurality of intersecting trenches with intermediate semiconductor islands. Thus, a deep trench arrangement can be achieved without being restricted by the overall width of the isolation structure.
Public/Granted literature
- US20120161276A1 SEMICONDUCTOR DEVICE COMPRISING AN ISOLATION TRENCH INCLUDING SEMICONDUCTOR ISLANDS Public/Granted day:2012-06-28
Information query
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