Invention Grant
- Patent Title: High voltage dedicated charging port
- Patent Title (中): 高压专用充电口
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Application No.: US13956574Application Date: 2013-08-01
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Publication No.: US08760123B2Publication Date: 2014-06-24
- Inventor: Shadi Hawawini , Georgios Konstantinos Paparrizos
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Fountainhead Law Group, P.C.
- Main IPC: H02J7/00
- IPC: H02J7/00 ; H02J7/04 ; G06F13/36
Abstract:
Circuitry in an electronic device may be attached to external device, such as a power supply, to receive a voltage at a desired voltage level from the external device. The circuitry may assert one of several electrical configurations on the cabling that electrically connects the portable device to the external device to indicate to the external device a desired voltage level.
Public/Granted literature
- US20140122909A1 HIGH VOLTAGE DEDICATED CHARGING PORT Public/Granted day:2014-05-01
Information query
