Invention Grant
US08760546B2 Solid state imaging apparatus with a shared drain diffusion layer by adjacent cells
有权
具有相邻单元的共享漏极扩散层的固态成像装置
- Patent Title: Solid state imaging apparatus with a shared drain diffusion layer by adjacent cells
- Patent Title (中): 具有相邻单元的共享漏极扩散层的固态成像装置
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Application No.: US13370710Application Date: 2012-02-10
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Publication No.: US08760546B2Publication Date: 2014-06-24
- Inventor: Maki Sato
- Applicant: Maki Sato
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-046478 20110303
- Main IPC: H04N5/335
- IPC: H04N5/335 ; H04N3/14

Abstract:
While a drain power source of a reset transistor and a drain power source of an amplifying transistor are separated, the load of drain power source can be reduced by sharing a drain diffusion layer of the reset transistor and a drain diffusion layer of the amplifying transistor by adjacent cells in sharing pixel units. Further, an efficient pixel layout is provided by reducing the number of routing wires.
Public/Granted literature
- US20120224089A1 SOLID STATE IMAGING APPARATUS Public/Granted day:2012-09-06
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