发明授权
US08760920B2 Semiconductor memory device integrating flash memory and resistive/magnetic memory
有权
集成闪存和电阻/磁性存储器的半导体存储器件
- 专利标题： Semiconductor memory device integrating flash memory and resistive/magnetic memory
- 专利标题（中）： 集成闪存和电阻/磁性存储器的半导体存储器件
-
申请号： US12982825申请日： 2010-12-30
-
公开(公告)号： US08760920B2公开(公告)日： 2014-06-24
- 发明人: Sook Joo Kim , Min Gyu Sung
- 申请人： Sook Joo Kim , Min Gyu Sung
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2010-0100263 20101014
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A semiconductor memory device includes a first memory device formed on a semiconductor substrate, including a first storage unit, a source, and a drain, a second memory device, including a second storage unit, and a bit line, wherein the second memory device is connected in series between the bit line and the drain.
公开/授权文献
- US20120092935A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2012-04-19
信息查询
