A source-sensing configuration for non-volatile memory devices to simultaneously read 2 bits in two different memory cells sharing a same word line is disclosed. In a first cell arrangement, a drain of a first read cell is biased and its source and that of two adjacent cells in a direction towards the second read cell are connected through source bit lines to a source sense amplifier. In a second cell arrangement, the drain of the second read cell is biased and its source and that of its two adjacent cells in a direction towards the first read cell are connected through source bit lines to a source sense amplifier. A memory cell acts as a cell pipe and joins together the first and second cell arrangements. Driving all six source bit lines simultaneously allows the 2 bits to be simultaneously read while maintaining currents due to pipe effect substantially minimized.