发明授权
- 专利标题: Nonvolatile semiconductor memory device
- 专利标题(中): 非易失性半导体存储器件
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申请号: US13407991申请日: 2012-02-29
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公开(公告)号: US08760935B2公开(公告)日: 2014-06-24
- 发明人: Hideto Takekida
- 申请人: Hideto Takekida
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2011-043795 20110301
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A block dividing unit groups one-word lines into p groups, to divide a block into p divisional blocks. An erasing unit has an erasing operation performed on data stored in memory cells in a memory cell array, on a divisional block basis. An erasing verifying unit has an erasing verifying operation performed on memory cells subjected to the erasing operation, on a divisional block basis.
公开/授权文献
- US20120224427A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2012-09-06