发明授权
- 专利标题: Electrical fuse memory arrays
- 专利标题(中): 电熔丝存储器阵列
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申请号: US13278686申请日: 2011-10-21
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公开(公告)号: US08760955B2公开(公告)日: 2014-06-24
- 发明人: Wei-Li Liao , Sung-Chieh Lin , Kuoyuan (Peter) Hsu
- 申请人: Wei-Li Liao , Sung-Chieh Lin , Kuoyuan (Peter) Hsu
- 申请人地址: TW
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW
- 代理机构: Lowe Hauptman & Ham, LLP
- 主分类号: G11C17/16
- IPC分类号: G11C17/16
摘要:
A mechanism of reconfiguring an eFuse memory array to have two or more neighboring eFuse bit cells placed side by and side and sharing a program bit line. By allowing two or more neighboring eFuse bit cells to share a program bit line, the length of the program bit line is shortened, which results in lower resistivity of the program bit line. The width of the program bit line may also be increased to further reduce the resistivity of program bit line. Program bit lines with low resistance and high current are needed for advanced eFuse memory arrays using low-resistivity eFuses.
公开/授权文献
- US20130100756A1 ELECTRICAL FUSE MEMORY ARRAYS 公开/授权日:2013-04-25