Invention Grant
- Patent Title: Method for proximity correction
- Patent Title (中): 邻近校正方法
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Application No.: US13534765Application Date: 2012-06-27
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Publication No.: US08762900B2Publication Date: 2014-06-24
- Inventor: Jaw-Jung Shin , Shy-Jay Lin , Hua-Tai Lin , Burn Jeng Lin
- Applicant: Jaw-Jung Shin , Shy-Jay Lin , Hua-Tai Lin , Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method of an integrated circuit (IC) design includes receiving an IC design layout. The IC design layout includes an IC feature with a first outer boundary and a first target points assigned to the first outer boundary. The method also includes generating a second outer boundary for the IC feature and moving all the first target points to the second outer boundary to form a modified IC design layout.
Public/Granted literature
- US20140007023A1 METHOD FOR PROXIMITY CORRECTION Public/Granted day:2014-01-02
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