发明授权
US08765028B2 Composition for oxide thin film, method of preparing the composition, method of forming the oxide thin film, and electronic device using the composition
有权
用于氧化物薄膜的组合物，制备组合物的方法，形成氧化物薄膜的方法和使用该组合物的电子器件
- 专利标题： Composition for oxide thin film, method of preparing the composition, method of forming the oxide thin film, and electronic device using the composition
- 专利标题（中）： 用于氧化物薄膜的组合物，制备组合物的方法，形成氧化物薄膜的方法和使用该组合物的电子器件
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申请号： US13114353申请日： 2011-05-24
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公开(公告)号： US08765028B2公开(公告)日： 2014-07-01
- 发明人: Hyun Jae Kim , You Seung Rim , Dong Lim Kim
- 申请人： Hyun Jae Kim , You Seung Rim , Dong Lim Kim
- 申请人地址： KR Seoul
- 专利权人： Industry-Academic Cooperation Foundation, Yonsei University
- 当前专利权人： Industry-Academic Cooperation Foundation, Yonsei University
- 当前专利权人地址： KR Seoul
- 代理机构： Carter, DeLuca, Farrell & Schmidt, LLP
- 优先权： KR10-2010-0083136 20100826
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01B1/08 ; H01B1/02
摘要：
Provided are a composition for an oxide semiconductor, a method of preparing the composition, methods of forming an oxide semiconductor thin film and an electronic device using the composition. The composition for an oxide semiconductor includes a tin compound, a zinc compound, and a low electronegativity metal compound containing a metal with an electronegativity lower than zinc.
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