Invention Grant
US08765537B2 Metal gate fill by optimizing etch in sacrificial gate profile
有权
通过优化牺牲栅极剖面中的蚀刻来进行金属栅极填充
- Patent Title: Metal gate fill by optimizing etch in sacrificial gate profile
- Patent Title (中): 通过优化牺牲栅极剖面中的蚀刻来进行金属栅极填充
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Application No.: US13606035Application Date: 2012-09-07
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Publication No.: US08765537B2Publication Date: 2014-07-01
- Inventor: Man Fai Ng , Bin Yang
- Applicant: Man Fai Ng , Bin Yang
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries Inc.
- Current Assignee: Globalfoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
A high-k metal gate electrode is formed with reduced gate voids. An embodiment includes forming a replaceable gate electrode, for example of amorphous silicon, having a top surface and a bottom surface, the top surface being larger than the bottom surface, removing the replaceable gate electrode, forming a cavity having a top opening larger than a bottom opening, and filling the cavity with metal. The larger top surface may be formed by etching the bottom portion of the amorphous silicon at greater temperature than the top portion, or by doping the top and bottom portions of the amorphous silicon differently such that the bottom has a greater lateral etch rate than the top.
Public/Granted literature
- US20130005128A1 METAL GATE FILL BY OPTIMIZING ETCH IN SACRIFICIAL GATE PROFILE Public/Granted day:2013-01-03
Information query
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