A method for fabricating fin-shaped field-effect transistor (FinFET) is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; forming a first gate structure on the fin-shaped structure; forming a first epitaxial layer in the fin-shaped structure adjacent to the first gate structure; forming an interlayer dielectric layer on the first gate structure and the first epitaxial layer; forming an opening in the interlayer dielectric layer to expose the first epitaxial layer; forming a silicon cap on the first epitaxial layer; and forming a contact plug in the opening.