Invention Grant
- Patent Title: Method of fabricating thermally controlled refractory metal resistor
- Patent Title (中): 制造耐热难熔金属电阻的方法
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Application No.: US14048629Application Date: 2013-10-08
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Publication No.: US08765568B2Publication Date: 2014-07-01
- Inventor: Joseph M. Lukaitis , Deborah M. Massey , Timothy D. Sullivan , Ping-Chuan Wang , Kimball M. Watson
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb & Riley, LLC
- Agent Richard M. Kotulak, Esq.
- Main IPC: H01L23/36
- IPC: H01L23/36

Abstract:
A structure and method of fabricating the structure includes a semiconductor substrate having a top surface defining a horizontal direction and a plurality of interconnect levels stacked from a lowermost level proximate the top surface of the semiconductor substrate to an uppermost level furthest from the top surface. Each of the interconnect levels include vertical metal conductors physically connected to one another in a vertical direction perpendicular to the horizontal direction. The vertical conductors in the lowermost level being physically connected to the top surface of the substrate, and the vertical conductors forming a heat sink connected to the semiconductor substrate. A resistor is included in a layer immediately above the uppermost level. The vertical conductors being aligned under a downward vertical resistor footprint of the resistor, and each interconnect level further include horizontal metal conductors positioned in the horizontal direction and being connected to the vertical conductors.
Public/Granted literature
- US20140038381A1 THERMALLY CONTROLLED REFRACTORY METAL RESISTOR Public/Granted day:2014-02-06
Information query
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