发明授权
- 专利标题: Nanoscale electronic device with barrier layers
- 专利标题(中): 具有阻隔层的纳米级电子器件
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申请号: US13041617申请日: 2011-03-07
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公开(公告)号: US08766231B2公开(公告)日: 2014-07-01
- 发明人: Wei Yi , Jianhua Yang , Gilberto Medeiros Ribeiro
- 申请人: Wei Yi , Jianhua Yang , Gilberto Medeiros Ribeiro
- 申请人地址: US TX Houston
- 专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人地址: US TX Houston
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L21/62
摘要:
On example of the present invention is a nanoscale electronic device comprising a first conductive electrode, a second conductive electrode, and a device layer. The device layer comprises a first dielectric material, between the first and second conductive electrodes, that includes an effective device layer, a first barrier layer near a first interface between the first conductive electrode and the device layer, and a second barrier layer near a second interface between the second conductive electrode and the device layer. A second example of the present invention is an integrated circuit that incorporates nanoscale electronic devices of the first example.
公开/授权文献
- US20120228575A1 NANOSCALE ELECTRONIC DEVICE WITH BARRIER LAYERS 公开/授权日:2012-09-13