Invention Grant
US08766458B2 Surface depressions for die-to-die interconnects and associated systems and methods
有权
用于管芯到管芯互连的表面凹陷以及相关的系统和方法
- Patent Title: Surface depressions for die-to-die interconnects and associated systems and methods
- Patent Title (中): 用于管芯到管芯互连的表面凹陷以及相关的系统和方法
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Application No.: US13682019Application Date: 2012-11-20
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Publication No.: US08766458B2Publication Date: 2014-07-01
- Inventor: David S. Pratt
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/4763 ; H01L23/48 ; H01L21/768 ; H01L25/065 ; H01L23/00

Abstract:
Stacked microelectronic dies employing die-to-die interconnects and associated systems and methods are disclosed herein. In one embodiment, a stacked system of microelectronic dies includes a first microelectronic die, a second microelectronic die attached to the first die, and a die-to-die interconnect electrically coupling the first die with the second die. The first die includes a back-side surface, a surface depression in the back-side surface, and a first metal contact located within the surface depression. The second die includes a front-side surface and a second metal contact located at the front-side surface and aligned with the first metal contact of the first die. The die-to-die interconnect electrically couples the first metal contact of the first die with the second metal contact of the second die and includes a flowable metal layer that at least partially fills the surface depression of the first die.
Public/Granted literature
- US20130075898A1 SURFACE DEPRESSIONS FOR DIE-TO-DIE INTERCONNECTS AND ASSOCIATED SYSTEMS AND METHODS Public/Granted day:2013-03-28
Information query
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