发明授权
- 专利标题： Memelectronic device
- 专利标题（中）： 电子设备
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申请号： US13424034申请日： 2012-03-19
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公开(公告)号： US08767438B2公开(公告)日： 2014-07-01
- 发明人: Jianhua Yang , Byungjoon Choi , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
- 申请人： Jianhua Yang , Byungjoon Choi , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; G11C7/00 ; H01L45/00 ; H01L47/00 ; H01L27/24 ; H01L21/8239
摘要：
A memelectronic device may have a first and a second electrode spaced apart by a plurality of materials. A first material may have a memory characteristic exhibited by the first material maintaining a magnitude of an electrically controlled physical property after discontinuing an electrical stimulus on the first material. A second material may have an auxiliary characteristic.
公开/授权文献
- US20130242637A1 Memelectronic Device 公开/授权日：2013-09-19
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