发明授权
- 专利标题： Semiconductor memory device and driving method thereof
- 专利标题（中）： 半导体存储器件及其驱动方法
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申请号： US13339852申请日： 2011-12-29
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公开(公告)号： US08767479B2公开(公告)日： 2014-07-01
- 发明人: Jae-Woong Yun
- 申请人： Jae-Woong Yun
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2011-0110501 20111027
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C7/10 ; G11C8/00
摘要：
A semiconductor memory device using a termination scheme in a global data line includes a global data line and a data line drive unit. The global data line transfers data between an interface region and a plurality of core regions each having a memory bank. The data line drive unit is disposed in each of the core regions, and drives the data global line in response to data in a data transfer operation. The data line drive unit sets the global data line to a termination voltage level in a termination operation.
公开/授权文献
- US20130107643A1 SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD THEREOF 公开/授权日：2013-05-02
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