发明授权
- 专利标题： Band gap improvement in DRAM capacitors
- 专利标题（中）： DRAM电容器带隙改善
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申请号： US13237065申请日： 2011-09-20
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公开(公告)号： US08772123B2公开(公告)日： 2014-07-08
- 发明人: Hanhong Chen , Sandra G. Malhotra , Wim Deweerd , Hiroyuki Ode
- 申请人： Hanhong Chen , Sandra G. Malhotra , Wim Deweerd , Hiroyuki Ode
- 申请人地址： US CA San Jose JP Tokyo
- 专利权人： Intermolecular, Inc.,Elpida Memory, Inc.
- 当前专利权人： Intermolecular, Inc.,Elpida Memory, Inc.
- 当前专利权人地址： US CA San Jose JP Tokyo
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for forming a DRAM MIM capacitor stack having low leakage current and low EOT involves the use of an compound high k dielectric material. The dielectric material further comprises a dopant. One component of the compound high k dielectric material is present in a concentration between about 30 atomic % and about 80 atomic % and more preferably between about 40 atomic % and about 60 atomic %. In some embodiments, the compound high k dielectric material comprises an alloy of TiO2 and ZrO2 and further comprises a dopant of Al2O3. In some embodiments, the compound high k dielectric material comprises an admixture of TiO2 and HfO2 and further comprises a dopant of Al2O3.
公开/授权文献
- US20130071987A1 Band Gap Improvement In DRAM Capacitors 公开/授权日：2013-03-21
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