Invention Grant
- Patent Title: Multiple-time programming memory cells and methods for forming the same
- Patent Title (中): 多时间编程存储单元及其形成方法
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Application No.: US13437503Application Date: 2012-04-02
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Publication No.: US08772854B2Publication Date: 2014-07-08
- Inventor: Ching-Hung Fu , Chun-Yao Ko , Tuo-Hsin Chien , Ting-Chen Hsu
- Applicant: Ching-Hung Fu , Chun-Yao Ko , Tuo-Hsin Chien , Ting-Chen Hsu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/76 ; H01L21/336
Abstract:
A device includes an active region and a coupling capacitor. The capacitor includes a first floating gate as an upper capacitor plate of the coupling capacitor, and a doped semiconductor region as a lower capacitor plate of the coupling capacitor. The doped semiconductor region includes a surface portion at a surface of the active region, and a sidewall portion lower than a bottom surface of the surface portion. The sidewall portion is on a sidewall of the active region. A capacitor insulator is disposed between the upper capacitor plate and the lower capacitor plate. The capacitor insulator includes an upper portion, and a sidewall portion lower than a bottom surface of the upper portion.
Public/Granted literature
- US20130256772A1 Multiple-Time Programming Memory Cells and Methods for Forming the Same Public/Granted day:2013-10-03
Information query
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