发明授权
- 专利标题： Vertical memory devices and methods of manufacturing the same
- 专利标题（中）： 垂直存储器件及其制造方法
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申请号： US13221380申请日： 2011-08-30
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公开(公告)号： US08772857B2公开(公告)日： 2014-07-08
- 发明人: Byeong-In Choe , Jae-Hoon Jang , Sun-Il Shim , Han-Soo Kim , Jin-Man Han
- 申请人： Byeong-In Choe , Jae-Hoon Jang , Sun-Il Shim , Han-Soo Kim , Jin-Man Han
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2010-0102715 20101021
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A vertical memory device includes a channel, a ground selection line (GSL), word lines and a string selection line (SSL). The channel extends in a first direction substantially perpendicular to a top surface of a substrate, and a thickness of the channel is different according to height. The GSL, the word lines and the SSL are sequentially formed on a sidewall of the channel in the first direction and spaced apart from each other.
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