Invention Grant
US08774243B2 Dual mode semiconductor laser and terahertz wave apparatus using the same
有权
双模半导体激光器和使用其的太赫兹波装置
- Patent Title: Dual mode semiconductor laser and terahertz wave apparatus using the same
- Patent Title (中): 双模半导体激光器和使用其的太赫兹波装置
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Application No.: US13022985Application Date: 2011-02-08
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Publication No.: US08774243B2Publication Date: 2014-07-08
- Inventor: Namje Kim , Kyung Hyun Park , Young Ahn Leem , Chul-Wook Lee , Sang-Pil Han , Dong-Hun Lee , Min Yong Jeon
- Applicant: Namje Kim , Kyung Hyun Park , Young Ahn Leem , Chul-Wook Lee , Sang-Pil Han , Dong-Hun Lee , Min Yong Jeon
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2010-0084922 20100831
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.
Public/Granted literature
- US20120051386A1 DUAL MODE SEMICONDUCTOR LASER AND TERAHERTZ WAVE APPARATUS USING THE SAME Public/Granted day:2012-03-01
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